IndiumV3, Chine, Analysis, bibRecord, 000271

Efficient quantum dot light-emitting diodes with solution-processable molybdenum oxide as the anode buffer layer

Identifieur interne : 000271 ( Chine/Analysis ); précédent : 000270; suivant : 000272

Efficient quantum dot light-emitting diodes with solution-processable molybdenum oxide as the anode buffer layer

Auteurs : RBID : Pascal:13-0181322

Descripteurs français

Pascal (Inist)
- Point quantique, Nanomatériau, Diode électroluminescente, Dispositif optoélectronique, Oxyde de molybdène, Couche tampon, Largeur bande, Optimisation, Interface, Contact ohmique, Transfert charge, Substrat oxyde d'indium et de zinc, Substrat InSnO, 8107T, 8535B, 8107B, 8560J.

English descriptors

KwdEn :
- Bandwidth, Buffer layer, Charge transfer, Interfaces, Light emitting diodes, Molybdenum oxide, Nanostructured materials, Ohmic contacts, Optimization, Optoelectronic devices, Quantum dots.

Abstract

Quantum dot light-emitting diodes (QD-LEDs) are characterized by pure and saturated emission colors with narrow bandwidth. Optimization of the device interface is an effective way to achieve stable and high-performance QD-LEDs. Here we utilized solution-processed molybdenum oxide (MoO_x) as the anode buffer layer on ITO to build efficient QD-LEDs. Using MoO_x as the anode buffer layer provides the QD-LED with good Ohmic contact and a small charge transfer resistance. The device luminance is nearly independent of the thickness of the MoO_x anode buffer layer. The QD-LEDs with a MoO_x anode buffer layer exhibit a maximum luminance and luminous efficiency of 5230 cd m^-2 and 0.67 cd A^-1 for the yellow emission at 580 nm, and 7842 cd m^-2 and 1.49 cd A^-1 for the red emission at 610 nm, respectively.

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Pascal:13-0181322

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Efficient quantum dot light-emitting diodes with solution-processable molybdenum oxide as the anode buffer layer</title>
<author><name>SHAOJIAN HE</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of Renewable Energy, North China Electric Power University</s1>
<s2>Beijing 102206</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<sZ>5 aut.</sZ>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name>SHUSHENG LI</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of Renewable Energy, North China Electric Power University</s1>
<s2>Beijing 102206</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
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</author>
<author><name>FUZHI WANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of Renewable Energy, North China Electric Power University</s1>
<s2>Beijing 102206</s2>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
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</author>
<author><name sortKey="Wang, Andrew Y" uniqKey="Wang A">Andrew Y. Wang</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ocean NanoTech, LLC</s1>
<s2>Springdale, AR 72764</s2>
<s3>USA</s3>
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<country>États-Unis</country>
<wicri:noRegion>Springdale, AR 72764</wicri:noRegion>
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<author><name>JUN LIN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of Renewable Energy, North China Electric Power University</s1>
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<author><name sortKey="Tan, Zhan Ao" uniqKey="Tan Z">Zhan Ao Tan</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of Renewable Energy, North China Electric Power University</s1>
<s2>Beijing 102206</s2>
<s3>CHN</s3>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
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<term>Charge transfer</term>
<term>Interfaces</term>
<term>Light emitting diodes</term>
<term>Molybdenum oxide</term>
<term>Nanostructured materials</term>
<term>Ohmic contacts</term>
<term>Optimization</term>
<term>Optoelectronic devices</term>
<term>Quantum dots</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Point quantique</term>
<term>Nanomatériau</term>
<term>Diode électroluminescente</term>
<term>Dispositif optoélectronique</term>
<term>Oxyde de molybdène</term>
<term>Couche tampon</term>
<term>Largeur bande</term>
<term>Optimisation</term>
<term>Interface</term>
<term>Contact ohmique</term>
<term>Transfert charge</term>
<term>Substrat oxyde d'indium et de zinc</term>
<term>Substrat InSnO</term>
<term>8107T</term>
<term>8535B</term>
<term>8107B</term>
<term>8560J</term>
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<front><div type="abstract" xml:lang="en">Quantum dot light-emitting diodes (QD-LEDs) are characterized by pure and saturated emission colors with narrow bandwidth. Optimization of the device interface is an effective way to achieve stable and high-performance QD-LEDs. Here we utilized solution-processed molybdenum oxide (MoO<sub>x</sub>
) as the anode buffer layer on ITO to build efficient QD-LEDs. Using MoO<sub>x</sub>
 as the anode buffer layer provides the QD-LED with good Ohmic contact and a small charge transfer resistance. The device luminance is nearly independent of the thickness of the MoO<sub>x</sub>
 anode buffer layer. The QD-LEDs with a MoO<sub>x</sub>
 anode buffer layer exhibit a maximum luminance and luminous efficiency of 5230 cd m<sup>-2</sup>
 and 0.67 cd A<sup>-1</sup>
 for the yellow emission at 580 nm, and 7842 cd m<sup>-2</sup>
 and 1.49 cd A<sup>-1</sup>
 for the red emission at 610 nm, respectively.</div>
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<fA11 i1="01" i2="1"><s1>SHAOJIAN HE</s1>
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<fA11 i1="03" i2="1"><s1>FUZHI WANG</s1>
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<sZ>3 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>Quantum dot light-emitting diodes (QD-LEDs) are characterized by pure and saturated emission colors with narrow bandwidth. Optimization of the device interface is an effective way to achieve stable and high-performance QD-LEDs. Here we utilized solution-processed molybdenum oxide (MoO<sub>x</sub>
) as the anode buffer layer on ITO to build efficient QD-LEDs. Using MoO<sub>x</sub>
 as the anode buffer layer provides the QD-LED with good Ohmic contact and a small charge transfer resistance. The device luminance is nearly independent of the thickness of the MoO<sub>x</sub>
 anode buffer layer. The QD-LEDs with a MoO<sub>x</sub>
 anode buffer layer exhibit a maximum luminance and luminous efficiency of 5230 cd m<sup>-2</sup>
 and 0.67 cd A<sup>-1</sup>
 for the yellow emission at 580 nm, and 7842 cd m<sup>-2</sup>
 and 1.49 cd A<sup>-1</sup>
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<s4>INC</s4>
<s5>73</s5>
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Efficient quantum dot light-emitting diodes with solution-processable molybdenum oxide as the anode buffer layer

Efficient quantum dot light-emitting diodes with solution-processable molybdenum oxide as the anode buffer layer

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri